IRLBD59N04ETRLP【PDF 1/9 页】MOSFET N-CH 40V 59A D2PAK-5

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Sheet目录448

[1页]2页 3页 4页 5页

PD -93910B

IRLBD59N04E

HEXFET ? Power MOSFET

Integrated Temperature Sensing Diode

Ultra Low On-Resistance

Dynamic dv/dt Rating

175 ° C Operating Temperature

Fully Avalanche Rated

Zener Gate Protected

Description

The IRLBD59N04E is a 40V, N-channel HEXFET ?

power MOSFET with gate protection provided by

integrated back to back zener diodes. Temperature

sensing is given by the change in forward voltage drop

of two antiparallel electrically isolated poly-silicon diodes.

The IRLBD59N04E provides cost effective temperature

sensing for system protection along with the quality and

ruggedness you expect from a HEXFET power MOSFET.

Absolute Maximum Ratings

V DSS = 40V

R DS(on) = 0.018 ?

I D = 59A

5 Lead-D 2 Pak

Parameter

Max.

Units

I D @ T C = 25°C

Continuous Drain Current, V GS @ 10V

I D @ T C = 100°C

I DM

P D @T C = 25°C

V GS

E AS

I AR

E AR

dv/dt

I G

V ESD

T J

T STG

Continuous Drain Current, V GS @ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V GS Clamp Current

Electrostatic Votage Rating

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

230

130

0.89

± 10

340

3.6

± 50

± 2.0

-55 to + 175

300 (1.6mm from case )

10 lbf?in (1.1N?m)

W/°C

V/ns

°C

Thermal Resistance

Parameter

Typ.

Max.

Units

R θ JC

R θ JA

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

–––

1.12

°C/W

www.irf.com

11/13/01

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